Creation of Vias With Optimized Profile for 3-D Through Silicon Interconnects (TSV)-Reference-Cited by-同舟云学术

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Creation of Vias With Optimized Profile for 3-D Through Silicon Interconnects (TSV)

Published:2009-06 Issue:S1 Volume:6 Page:S193-S197
ISSN:1612-8850
Container-title:Plasma Processes and Polymers
language:en
Short-container-title:Plasma Processes Polym.

Author:

Richter Karola,Viehweger Kay,He Jian,Bartha Johann-Wolfgang

Publisher

Wiley

Subject

Polymers and Plastics,Condensed Matter Physics

Reference9 articles.

1. D. Thomas Semiconductor International

2. B. Kim Semiconductor International

3. F. Lärmer A. Schilp 1994

4. Advanced silicon etching using high-density plasmas

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of deep reactive ion etching for microscale silicon hole arrays with high aspect ratio;Micro and Nano Systems Letters;2022-09-09

2. TSV Transistor – vertical metal gate FET inside a Through Silicon VIA;IEEE Electron Device Letters;2018

3. Optimization of submicron deep trench profiles with the STiGer cryoetching process: reduction of defects;Journal of Micromechanics and Microengineering;2011-06-27

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