Optical Properties of InAs Quantum Dots Grown on InP (001) Substrate by MOCVD
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
3. Effect of strain on surface morphology in highly strained InGaAs films
4. Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)
5. Self-organized InAs islands on InP(311)B substrates emitting around 1.55μm
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2. Effects of confined longitudinal optical phonons on the exciton binding energy in a cubic quantum dot;Journal of Applied Physics;2003-07
3. Growth and characterization of InAs on (100) InP ultrathin single quantum wells using tertiarybutylarsine and tertiarybutylphosphine;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-05
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