Thermal stability of the Al2 O3 passivation on p-type silicon surfaces for solar cell applications-Reference-Cited by-同舟云学术

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Thermal stability of the Al2 O3 passivation on p-type silicon surfaces for solar cell applications

Published:2009-08-05 Issue:7-8 Volume:3 Page:233-235
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:phys. stat. sol. (RRL)

Author:

Benick Jan,Richter Armin,Hermle Martin,Glunz Stefan W.

Funder

German Federal Ministry for the Environment, Nature Conservation and Nuclear Safety

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.200903209/fullpdf

Reference16 articles.

1. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon

2. Minority carrier lifetime degradation in boron-doped Czochralski silicon

3. J. Libal in: Proceedings of the 20th EC PVSEC Barcelona, Spain (2005), p. 793.

4. J. Zhao in: Proceedings of the 3rd WCPEC, Osaka, Japan (2003), p. 923.

5. Studies of diffused boron emitters: saturation current, bandgap narrowing, and surface recombination velocity

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