Inversion domain boundaries in GaN studied by X-ray microprobe-Reference-Cited by-同舟云学术

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Inversion domain boundaries in GaN studied by X-ray microprobe

Published:2009-12-09 Issue:1-2 Volume:4 Page:31-33
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:phys. stat. sol. (RRL)

Author:

Martínez-Criado Gema,Somogyi Andrea,Alén Benito,Miskys Claudio,Tucoulou Remi,Cloetens Peter,Sans Juan Angel,Susini Jean

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.200903367/fullpdf

Reference10 articles.

1. Inversion Domain and Stacking Mismatch Boundaries in GaN

2. Direct Observation of Inversion Domain Boundaries of GaN onc-Sapphire at Sub-ångstrom Resolution

3. Playing with Polarity

4. ID22: a multitechnique hard X-ray microprobe beamline at the European Synchrotron Radiation Facility

5. Scanning x-ray excited optical luminescence microscopy in GaN

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