A physically based diode model for circuit simulation
Author:
Affiliation:
1. University of Tunis El Manar, ENIT; L.S.E - B.P.37; Tunis Le Bélvédère; Tunisia
2. INSA-Lyon, Lab. Ampere, CNRS; Université de Lyon; Lyon-Villeurbanne; France
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation
Reference16 articles.
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4. Experimental analysis of punch-through conditions in power P-I-N diodes;Tarek;IEEE Trans Power Electron,2007
5. A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices;Tarek;Superlattices and Microstructures (Elsevier),2006
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A parameter extraction method of the PIN diode for physics‐based circuit simulation over a wide frequency range;International Journal of RF and Microwave Computer-Aided Engineering;2020-08-11
2. An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2014-06-16
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