Three-Dimensional Integration of Ge and Two-Dimensional Materials for One-Dimensional Devices
Author:
Affiliation:
1. School of Information and Communication Technology; KTH Royal Institute of Technology; 16440 Kista Sweden
Publisher
John Wiley & Sons, Inc.
Reference63 articles.
1. Cramming more components onto integrated circuits;Moore;Electronics,1965
2. Design of ion-implanted MOSFET's with very small physical dimensions;Dennard;IEEE J. Solid-State Circuits,1974
3. P. Smeys V. Mcgahay I. Yang et al A high performance 0.13 µm SOI CMOS technology with Cu interconnects and low- κ BEOL dielectric Symp. VLSI Technol 2000 184 185
4. M. Wiatr T. Feudel A. Wei et al Review on process-induced strain techniques for advanced logic technologies 15th Int. Conf. Adv. Therm. Process. Semicond 2007 19 29
5. K. Mistry C. Allen C. Auth et al A 45 nm logic technology with high- κ + metal gate transistors, strained silicon, 9 Cu interconnect layers, 193 nm dry patterning, and 100% Pb-free packaging Tech. Dig. IEDM 2007 247 250
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