Affiliation:
1. Center of Advanced Optoelectronic Materials, College of Materials and Environmental Engineering Hangzhou Dianzi University Hangzhou 310018 China
2. The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China
Abstract
AbstractNear‐infrared (NIR) phosphor‐converted light‐emitting diode (pc‐LED) light sources in the second NIR window (NIR‐II, 1000–1700 nm) have sparked great interest for their emerging applications in non‐destructive detection and medical diagnostics fields. However, the development of efficient NIR‐II phosphors that can be excited by commercial blue LED chips remains a significant challenge, and thus impeding the applications of NIR pc‐LED. Herein, a blue‐light‐excitable broadband NIR‐II luminescence of Ni2+ is achieved upon incorporating Cr3+ and Ni2+ into the Ca3Ga2Ge3O12 (CGGO) host simultaneously. Through the energy transfer from Cr3+ to Ni2+, CGGO:Cr3+,Ni2+ phosphor presents the improved NIR‐II emission peaking at 1470 nm under 460 nm blue light excitation. The internal/external quantum efficiency values are significantly improved from 13.8%/3.3% to 24.6%/13.3% along with the enhanced luminescence thermal stability. Finally, a NIR pc‐LED is fabricated by combining CGGO:Cr3+,Ni2+ phosphor with 450 nm blue chip, and its potential applications in non‐destructive examination and biomedical imaging fields have been demonstrated. The strategy of Cr3+ and Ni2+ co‐doping solves the problem that Ni2+ luminescence cannot be effectively excited by blue light and provides the design insights to exploit more ultra‐broadband NIR pc‐LEDs based on blue LED chips.
Funder
Fundamental Research Funds for the Provincial Universities of Zhejiang
National Natural Science Foundation of China
Cited by
2 articles.
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