Affiliation:
1. Display Research Center; Samsung Display Co., Ltd.; #1 Samsung-ro, Giheung-gu Yongin-si Gyeonggi-do 17113 Korea
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Uniaxial-process-induced strained-Si: Extending the CMOS roadmap;Thompson;IEEE Trans. Electron Devices,2006
2. Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs;Thompson;IEDM Tech. Dig.,2004
3. A logic nanotechnology featuring strained-silicon;Thompson;IEEE Electron Device Lett.,2004
4. Modeling of some electrical parameters of a MOSFET under applied uniaxial stress;Chaudhry;J. Comput. Electron.,2011
5. Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors;Sun;J. Appl. Phys.,2007
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31 articles.
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