5.8-inch QHD flexible AMOLED display with enhanced bendability of LTPS TFTs

Author:

Lee Jaeseob1ORCID,Nguyen Thanh Tien1,Bae Joonwoo1,Jo Gyoochul1,Lee Yongsu1,Yang Sunghoon1,Chu Hyeyong1,Kwag Jinoh1

Affiliation:

1. Display Research Center; Samsung Display Co., Ltd.; #1 Samsung-ro, Giheung-gu Yongin-si Gyeonggi-do 17113 Korea

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Uniaxial-process-induced strained-Si: Extending the CMOS roadmap;Thompson;IEEE Trans. Electron Devices,2006

2. Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs;Thompson;IEDM Tech. Dig.,2004

3. A logic nanotechnology featuring strained-silicon;Thompson;IEEE Electron Device Lett.,2004

4. Modeling of some electrical parameters of a MOSFET under applied uniaxial stress;Chaudhry;J. Comput. Electron.,2011

5. Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors;Sun;J. Appl. Phys.,2007

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