Simulation of nanoindentation experiments of single-layer and double-layer thin films using finite element method-Reference-Cited by-同舟云学术

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Simulation of nanoindentation experiments of single-layer and double-layer thin films using finite element method

Published:2014-04-10 Issue:10-11 Volume:46 Page:1071-1076
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Moćko W.¹²,Szymańska M.¹³,Śmietana M.³,Kalisz M.¹³

Affiliation:

1. Center of Material Testing and Mechatronics; Motor Transport Institute; Jagiellońska 80 03-301 Warsaw Poland

2. Institute of Fundamental Technological Research; Polish Academy of Sciences; Pawińskiego 5B 02-106 Warsaw Poland

3. Institute of Microelectronics and Optoelectronics; Warsaw University of Technology; Koszykowa 75 00-662 Warsaw Poland

Funder

Polish National Centre for Research and Development

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.5473/fullpdf

Reference29 articles.

1. Silicon oxynitride prepared by chemical vapor deposition as optical waveguide materials

2. Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology

3. Antireflection Coating Design for Triple-Junction III–V/Ge High-Efficiency Solar Cells Using Low Absorption PECVD Silicon Nitride

4. Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides

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