MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement-Reference-Cited by-同舟云学术

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MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement

Published:2016-01-27 Issue:5-6 Volume:13 Page:311-316
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Zhao Ming,Liang Hu,Kandaswamy Prem Kumar,Van Hove Marleen,Venegas Rafael,Vranken Evi,Favia Paola,Vanderheyden Annelies,Vanhaeren Danielle,Saripalli Yoga Nrusimha,Decoutere Stefaan,Langer Robert

Funder

imec's industrial affiliation program for GaN-on-Si

Publisher

Wiley

Subject

Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssc.201510280/fullpdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer;ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC);2022-09-19

2. Role of electron injection on vertical leakage in GaN-on-Si epitaxial layers;Superlattices and Microstructures;2019-04

3. Analysis of Leakage Mechanisms in AlN Nucleation Layers on p-Si and p-SOI Substrates;IEEE Transactions on Electron Devices;2019-04

4. Investigation of pattern-orientation on stress in GaN grown on Si(111) substrate in lateral confinement epitaxy;Superlattices and Microstructures;2018-10

5. Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si;Semiconductor Science and Technology;2018-06-19

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