Investigation into low-temperature photoluminescence internal quantum efficiency and defect-recombination in InGaN light-emitting diodes-Reference-Cited by-同舟云学术

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Investigation into low-temperature photoluminescence internal quantum efficiency and defect-recombination in InGaN light-emitting diodes

Published:2014-01-28 Issue:3-4 Volume:11 Page:718-721
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Ji Xiaoli,Ma Jun,Wei Xuecheng,Duan Ruifei,Wang Junxi,Yi Xiaoyan,Zeng Yiping,Wang Guohong,Yang Fuhua,Li Jinmin

Funder

National High Technology Research and Development Program of China

Publisher

Wiley

Subject

Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssc.201300479/fullpdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative Study on Temperature‐Dependent Internal Quantum Efficiency and Light–Extraction Efficiency in III‐Nitride–, III‐Phosphide–, and III‐Arsenide–based Light‐Emitting Diodes;physica status solidi (a);2024-06-11

2. Low temperature absolute internal quantum efficiency of InGaN-based light-emitting diodes;Applied Physics Letters;2023-02-27

3. InGaN-based nanowires development for energy harvesting and conversion applications;Journal of Applied Physics;2021-03-28

4. Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization;ACS Applied Materials & Interfaces;2020-09-01

5. Luminescence and energy transfer mechanism in Eu3+/Tb3+-co-doped ZrO2 nanocrystal rods;Journal of Nanoparticle Research;2016-12-24

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