Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization-Reference-Cited by-同舟云学术

Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization

Published:2020-09-01 Issue:37 Volume:12 Page:41649-41658
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Subedi Ram Chandra¹^ORCID,Min Jung-Wook¹^ORCID,Mitra Somak²,Li Kuang-Hui¹,Ajia Idris²^ORCID,Stegenburgs Edgars¹^ORCID,Anjum Dalaver H.³,Conroy Michele⁴,Moore Kalani⁴^ORCID,Bangert Ursel⁴,Roqan Iman S.²^ORCID,Ng Tien Khee¹^ORCID,Ooi Boon S.¹

Affiliation:

1. Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

2. Semiconductor and Material Spectroscopy, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

3. Imaging and Characterization Core Lab, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

4. Department of Physics, Bernal Institute, University of Limerick, Limerick V94 T9PX, Ireland

Funder

King Abdullah University of Science and Technology

King Abdulaziz City for Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c03259