Photomodulation reflectance study of temperature dependence of the band gap of ZnSe1-xOx
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A comparative analysis of ZnCdTe and ZnCdTeO semiconductor alloys as competent materials for optoelectronic applications;International Journal of Modern Physics B;2023-02-06
2. Study of delocalized and localized states in ZnSeO layers with photoluminescence, micro-photoluminescence, and time-resolved photoluminescence;Journal of Applied Physics;2019-05-28
3. The temperature dependence of the band-gap energy of the dilute oxygen ZnO x Se1−x;Applied Physics A;2017-02
4. Effects of band anticrossing on the temperature dependence of the band gap of ZnSe1−xOxalloys;Semiconductor Science and Technology;2016-12-19
5. Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides;Semiconductor Science and Technology;2015-07-28
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