Band structures of Si/InGaP heterojunctions by using surface-activated bonding-Reference-Cited by-同舟云学术

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Band structures of Si/InGaP heterojunctions by using surface-activated bonding

Published:2013-09-20 Issue:11 Volume:10 Page:1644-1647
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Liang Jianbo,Morimoto Masashi,Nishida Shota,Shigekawa Naoteru

Funder

“Creative research for clean energy generation using solar energy” project in Core Research for Evolutional Science and Technology (CREST) programs of the Japan Science and Technology Agency

Publisher

Wiley

Subject

Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssc.201300235/fullpdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of β-Ga₂O₃/Si heterointerface and characterization of interfacial structures for high-power device applications;Japanese Journal of Applied Physics;2022-03-02

2. Fabrication of n-Si/n-Ga₂O₃ heterojunctions by surface-activated bonding and their electrical properties;Journal of Applied Physics;2022-02-21

3. Direct observation of contact potential distributions of wafer-bonded p-GaAs/n-GaN and p-GaAs/n-Si by scanning Kelvin probe force microscopy;Japanese Journal of Applied Physics;2020-10-29

4. GaAs/Indium Tin Oxide/Si Bonding Junctions for III-V-on-Si Hybrid Multijunction Cells With Low Series Resistance;IEEE Journal of Photovoltaics;2018

5. Analysis of effects of interface-state charges on the electrical characteristics in GaAs/GaN heterojunctions;Japanese Journal of Applied Physics;2017-12-28

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