Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons-Reference-Cited by-同舟云学术

Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons

Published:2017-06-27 Issue:7 Volume:14 Page:1700120
ISSN:1862-6351
Container-title:physica status solidi c
language:en
Short-container-title:Phys. Status Solidi C

Author:

Arutyunov Nikolay¹²³,Emtsev Vadim²,Elsayed Mohamed¹⁴,Krause‐Rehberg Reinhard¹,Abrosimov Nikolay⁵,Oganesyan Gagik²,Kozlovski Vitalii⁶

Affiliation:

1. Department of PhysicsMartin Luther University Hallevon‐Danckelmann‐Platz 306120 HalleGermany

2. Ioffe Physico‐Technical Institute194021 St. PetersburgRussia

3. Institute of Ion‐Plasma and Laser Technologies (Institute of Electronics)700170 TashkentUzbekistan

4. Faculty of Science, Department of PhysicsMinia University61519 MiniaEgypt

5. Leibniz Institute for Crystal GrowthD‐12489 BerlinGermany

6. St. Petersburg State Polytechnical University195251 St. PetersburgRussia

Funder

Deutscher Akademischer Austauschdienst

Publisher

Wiley

Subject

Condensed Matter Physics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201700120

Reference32 articles.

1. Simulation of non-ionising energy loss and defect formation in silicon

3. Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals

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