Reliability of T-gate AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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Reliability of T-gate AlGaN/GaN HEMTs

Published:2011-06-20 Issue:7-8 Volume:8 Page:2399-2403
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Burnham Shawn D.,Bowen Ross,Willadsen Pete,Bracamontes Hector,Hashimoto Paul,Hu Ming,Wong Danny,Chen Mary,Micovic Miroslav

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress;Microelectronics Reliability;2023-11

2. Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress;2021 IEEE International Reliability Physics Symposium (IRPS);2021-03

3. Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications;Microelectronics Reliability;2017-09

4. Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors;Microelectronics Reliability;2017-03

5. Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress;Microelectronics Reliability;2016-09

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