Self-assembled InGaAs/GaAs quantum dot photodetector on germanium substrate
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Self-Assembled Quantum Dot Photodetector: A Pathbreaker in the Field of Optoelectronics;Quantum Dot Photodetectors;2021
2. Enhanced luminescence and optical performance through strain minimization in self-assembled InAs QDs using dual quaternary-ternary/ternary-quaternary capping;Journal of Luminescence;2018-05
3. Self-catalyst assisted and catalyst-free epitaxial growth of InAs on Ge (111): Role of substrate surface and evolution of polytypism;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-11
4. Effect of surface morphology on the optical properties of InAs/Ge (1 1 1);Applied Surface Science;2016-05
5. Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer;Chinese Physics Letters;2014-12
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