The influence of background As on GaSb/GaAs quantum dots and its application in infrared photodetectors-Reference-Cited by-同舟云学术

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The influence of background As on GaSb/GaAs quantum dots and its application in infrared photodetectors

Published:2011-11-07 Issue:2 Volume:9 Page:314-317
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Lin Wei-Hsun,Tseng Chi-Che,Wu Shung-Yi,Wu Meng-Hsun,Lin Shih-Yen,Wu Meng-Chyi

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion migration in GaSb/Mn multilayers for memories applications: Study of Mn diffusion into the GaSb layers;Journal of Alloys and Compounds;2023-10

2. Quantitative description of carrier dynamics in GaSb/GaAs quantum-ring-with-dot structures;Journal of Physics D: Applied Physics;2021-09-28

3. Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material;Scientific Reports;2020-03-16

4. Highly ordered Ga(As)Sb quantum dots grown on pre-structured GaAs;SPIE Proceedings;2017-02-20

5. Type-II GaSb/GaAs Nanostructures Grown by Droplet Epitaxy with Various Ga Amounts;Advanced Materials Research;2015-12

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