Time-resolved electroabsorption measurement of carrier velocity in inverted polarity In1-x Ga x N/GaN heterostructures due to internal electric fields-Reference-Cited by-同舟云学术

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Time-resolved electroabsorption measurement of carrier velocity in inverted polarity In1-x Ga x N/GaN heterostructures due to internal electric fields

Published:2014-02 Issue:3-4 Volume:11 Page:682-685
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Connelly Blair C.,Gallinat Chad S.,Woodward Nathaniel T.,Enck Ryan W.,Metcalfe Grace D.,Tompkins Randy,Jones Kenneth A.,Shen Hongen,Wraback Michael

Funder

U.S. Army Research Laboratory Postdoctoral Fellowship Program

Publisher

Wiley

Subject

Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssc.201300681/fullpdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III-Nitride p-down green (520 nm) light emitting diodes with near-ideal voltage drop;Applied Physics Letters;2022-07-11

2. On the determination of alloy composition using optical spectroscopy in MOVPE grown InGaN layers on Si(111);Superlattices and Microstructures;2019-10

3. Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors;physica status solidi (a);2017-12-21

4. Plasma-assisted molecular beam epitaxy of strain-compensated a-plane InGaN/AlGaN superlattices;physica status solidi (c);2015-01-23

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