Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors-Reference-Cited by-同舟云学术

Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors

Published:2017-12-21 Issue:2 Volume:215 Page:1700757
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Singh Vikash K.¹²,Nath Digbijoy N.²

Affiliation:

1. Solid State Physics Laboratory; Delhi-110054 India

2. Centre for Nano Science and Engineering, Indian Institute of Science; Bangalore-560012 India

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

3. Hot phonon effect on electron velocity saturation in GaN: A second look

4. Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz

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4. Optical characterization of InAlN/AlN/InGaN/GaN/sapphire high electron mobility transistor structures;DAE SOLID STATE PHYSICS SYMPOSIUM 2018;2019

5. Modeling charge density in AlGaN/AlN/InGaN/GaN-based double heterostructures including InGaN layer strain relaxation;Journal of Physics Communications;2018-12-19