Advantage of tapered and graded AlGaN electron blocking layer in InGaN-based blue laser diodes
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 具有单调组分渐变空穴存储层和对称组分渐变空穴阻挡层的深紫外激光二极管性能优化;Laser & Optoelectronics Progress;2023
2. Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer;Journal of Russian Laser Research;2022-07
3. Improved performance characteristics of violet InGaN MQW LDs through asymmetric W-shaped quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2021-03
4. Reduction of Electron Leakage of AlGaN-Based Deep Ultraviolet Laser Diodes Using an Inverse-Trapezoidal Electron Blocking Layer*;Chinese Physics Letters;2020-02-01
5. Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer*;Chinese Physics B;2020-01-01
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