Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer-Reference-Cited by-同舟云学术

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Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer

Published:2011-06-01 Issue:7-8 Volume:8 Page:2430-2432
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Wang Yaqi,Xu Hui,Alur Siddharth,Sharma Yogesh,Tong Fei,Gartland Patrick,Issacs-Smith Tamara,Ahyi Claude,Williams John,Park Minseo,Wheeler Ginger,Johnson Mark,Allerman Andrew A.,Hanser Andrew,Paskova Tanya,Preble Edward A.,Evans Keith R.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved rhenium Schottky diodes to n-type gallium nitride;Materials Science in Semiconductor Processing;2022-09

2. Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors;Micromachines;2020-05-20

3. Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride;Materials Science in Semiconductor Processing;2019-05

4. GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates;AIP Advances;2019-04

5. Investigation of the reverse recovery characteristics of vertical bulk GaN-based Schottky rectifiers;Journal of Physics D: Applied Physics;2018-07-10

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