Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation - a long term study-Reference-Cited by-同舟云学术

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Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation - a long term study

Published:2013-12-09 Issue:1 Volume:11 Page:28-31
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Meirer Florian,Demenev Evgeny,Giubertoni Damiano,Vanzetti Lia,Gennaro Salvatore,Fedrizzi Michele,Pepponi Giancarlo,Steinhauser Georg,Vishwanath Vinayak,Foad Majeed,Bersani Massimo

Funder

Provincia Autonoma di Trento and the European Union within the Marie Curie cofund program

Publisher

Wiley

Subject

Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssc.201300160/fullpdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unraveling structural and compositional information in 3D FinFET electronic devices;Scientific Reports;2019-08-12

2. Characterization of arsenic plasma doping and postimplant processing of silicon using medium energy ion scattering;Journal of Vacuum Science & Technology B;2019-05

3. Quantitative Aspects of PLAD Sidewall Doping Characterization by SIMS and APT;Microscopy and Microanalysis;2018-11-14

4. Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface;Applied Surface Science;2015-11

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