Influence of the intrinsic length on p+ -i-n+ Si nanowire avalanche photodetectors on flexible plastic substrates-Reference-Cited by-同舟云学术

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Influence of the intrinsic length on p+ -i-n+ Si nanowire avalanche photodetectors on flexible plastic substrates

Published:2014-02 Issue:2 Volume:11 Page:217-221
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Yang Kyungwhan,Kwak Kiyeol,Kim Sangsig

Funder

Basic Science Research Program

Mid-career Researcher Program

Ministry of Education, the Korea Insitute of Energy Technology Evaluation and Planning

Ministry of Trade, Industry & Energy

Publisher

Wiley

Subject

Condensed Matter Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssc.201300388/fullpdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaAs/InAlAs avalanche photodiodes with a high responsivity and multiplication factor using carbon-doped p-InAlAs as the charge layer;Materials Today Communications;2024-06

2. An efficient modeling workflow for high-performance nanowire single-photon avalanche detector;Nanotechnology;2024-02-09

3. GaAs/GaAsSb Core–Shell Configured Nanowire-Based Avalanche Photodiodes up to 1.3 μm Light Detection;ACS Applied Nano Materials;2023-03-20

4. Fabrication and photoelectric properties of a graphene-silicon nanowire heterojunction on a flexible polytetrafluoroethylene substrate;Materials Letters;2020-12

5. InGaAs–GaAs Nanowire Avalanche Photodiodes Toward Single-Photon Detection in Free-Running Mode;Nano Letters;2018-12-05

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