Europium-doped GaN(Mg): beyond the limits of the light-emitting diode-Reference-Cited by-同舟云学术

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Europium-doped GaN(Mg): beyond the limits of the light-emitting diode

Published:2014-02 Issue:3-4 Volume:11 Page:662-665
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

O'Donnell K. P.,Edwards P. R.,Kappers M. J.,Lorenz K.,Alves E.,Boćkowski M.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystal-field analysis of photoluminescence from orthorhombic Eu centers and energy transfer from host to Eu in GaN co-doped with Mg and Eu;Journal of Luminescence;2024-06

2. Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-02

3. An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN;AIP Advances;2024-02-01

4. Crystal-field analysis and models of Eu-emission centers with C3 symmetry in in situ Eu- and Mg-codoping GaN layers;Journal of Luminescence;2023-10

5. Tuning the valence and concentration of europium and luminescence centers in GaN through co-doping and defect association;Physical Review Materials;2021-03-04

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