Hot-electron numerical modelling of short gate length pHEMTs applied to novel field plate structures-Reference-Cited by-同舟云学术

Hot-electron numerical modelling of short gate length pHEMTs applied to novel field plate structures

Published:2003-01 Issue:1 Volume:16 Page:15-28
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Hussain Shahzad,Cole Eric A. B.,Snowden Christopher M.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Reference13 articles.

1. Hot Electron Modelling of HEMTs

2. Two-dimensional hot-electron models for short-gate-length GaAs MESFET's

3. Hydrodynamic hot-electron transport model with Monte Carlo-generated transport parameters

4. Field-modulating plate (FP) InGaAs MESFET with high breakdown voltage and low distortion. IEEE Radio Frequency Integrated Circuits Symposium, System Devices and Fundamental Research, NEC Corporation, 2-9-1 Seiran, OTsu, Shiga 520-0833, Japan, 2001.

5. 100W L-BAND GaAs POWER FP-HFET OPERATED AT 30 V. NEC Corporation, ULSI device development laboratories, pre-published, 2001.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mathematical and Numerical Modelling of Heterostructure Semiconductor Devices: From Theory to Programming;2009

2. Accurate evaluation of integrals arising from the bulk electron densities in quantum wells of high electron mobility transistors;Computer Physics Communications;2008-05

3. Efficient three-dimensional parallel simulations of PHEMTs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2005

4. The phase plane method for the solution of equations applied to semiconductor device modelling;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2004-06-30