Accurate evaluation of integrals arising from the bulk electron densities in quantum wells of high electron mobility transistors
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,Hardware and Architecture
Reference14 articles.
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3. Compound Semiconductor Device Modeling;Cole,1993
4. Numerical algorithm for modeling microwave semiconductor devices;Cole;Int. J. Num. Modell.: Electron. Networks, Devices Fields,1995
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2. Unified treatment for accurate and fast evaluation of the Fermi–Dirac functions;Chinese Physics B;2010-05
3. Comments on the accurate evaluation of integrals arising from the bulk electron densities in quantum wells;Computer Physics Communications;2008-12
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