Large Magnetoresistance in Scandium Nitride Magnetic Tunnel Junctions Using First Principles-Reference-Cited by-同舟云学术

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Large Magnetoresistance in Scandium Nitride Magnetic Tunnel Junctions Using First Principles

Published:2021-10-04 Issue:11 Volume:4 Page:2100309
ISSN:2513-0390
Container-title:Advanced Theory and Simulations
language:en
Short-container-title:Adv. Theory Simul.

Author:

Karki Suyogya¹,Rogers Vivian¹,Jadaun Priyamvada¹,Marshall Daniel S.²³,Incorvia Jean Anne C.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering The University of Texas at Austin 2501 Speedway, EER 3.820 Austin TX 78712 USA

2. TAE Technologies, Inc. 19631 Pauling Foothill Ranch CA 92610 USA

3. School for Engineering of Matter, Transport and Energy Arizona State University 501 E. Tyler Mall, ERC 301 Tempe AZ 85281 USA

Funder

National Science Foundation

Sandia National Laboratories

Publisher

Wiley

Subject

Multidisciplinary,Modeling and Simulation,Numerical Analysis,Statistics and Probability

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adts.202100309

Reference39 articles.

1. H.Noguchi K.Ikegami S.Takaya E.Arima K.Kushida A.Kawasumi H.Hara K.Abe N.Shimomura J.Ito S.Fujita T.Nakda H.Nakamura 7.2 4Mb STT‐MRAM‐based cache with memory‐access‐aware power optimization and write‐verify‐write / read‐modify‐write scheme 2016 IEEE International Solid‐State Circuits Conference (ISSCC) 2016 pp. 132–133 https://doi.org/10.1109/ISSCC.2016.7417942.

2. Benchmarking of Beyond-CMOS Exploratory Devices for Logic Integrated Circuits

3. Logic circuit prototypes for three-terminal magnetic tunnel junctions with mobile domain walls

4. Perspective: Stochastic magnetic devices for cognitive computing

5. Magnetic domain wall neuron with lateral inhibition

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1. An all-Heusler magnetic tunnel junction model which provides a probability to realize maximal tunneling magnetoresistance at room temperature;Applied Surface Science;2024-05

2. Surface scattering-dependent electronic transport in ultrathin scandium nitride films;Applied Physics Letters;2023-11-06

3. Reversal of Band-Ordering Leads to High Hole Mobility in Strained p-type Scandium Nitride;Nano Letters;2023-08-29

4. Ab-initio predictions of mechanical, electronic, magnetic, and transport properties of bulk and heterostructure of a novel Fe-Cr based full Heusler chalcogenide;Journal of Physics and Chemistry of Solids;2023-07

5. Electronic and transport properties of Heusler alloy based magnetic tunneling junctions: A first principles study;Computational Materials Science;2023-01

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