Accurate Description of Coulombic Interactions in Organic Field‐Effect Transistors Enabled by Efficient 3D Poisson's Equation Solver with Mixed Boundary Conditions

Abstract

AbstractThe rational development of organic electronic devices can greatly benefit from a molecular‐level description, where an accurate description of the Coulombic interactions among charge carriers holds paramount importance. However, the molecular‐level organic field‐effect transistor (OFET) simulations do not fully include the short‐range charge‐carrier Coulombic interactions, thus limiting their accuracy. Here, an efficient solution is demonstrated to the 3D Poisson's equation with mixed boundary conditions, optimized for integration into the simulations of organic electronic devices. It leverages the finite difference method for discretization, the Krylov subspace iterative methods for solving the linear system, the algebraic multigrid algorithm for preconditioning, and OpenMP and CUDA parallelization for acceleration. For the organic field‐effect transistors of micrometer sizes or smaller dimensions, obtaining the electric potential within the device takes less than 0.1 s, which is sufficiently efficient for molecular‐level modeling. As a result, both short‐ and long‐range electrostatic interactions are successfully incorporated in the molecular‐level modeling of OFET devices. This integration significantly enhances the robustness of OFET modeling for future applications.