Bilayer Tellurene: A Potential p‐Type Channel Material for Sub‐10 nm Transistors-Reference-Cited by-同舟云学术

Bilayer Tellurene: A Potential p‐Type Channel Material for Sub‐10 nm Transistors

Published:2021-01-12 Issue:2 Volume:4 Page:2000252
ISSN:2513-0390
Container-title:Advanced Theory and Simulations
language:en
Short-container-title:Adv. Theory Simul.

Author:

Li Qiuhui¹^ORCID,Xu Lin²,Liu Shiqi¹,Yang Jie¹,Fang Shibo¹,Li Ying¹,Ma Jiachen¹,Zhang Zhiyong²,Quhe Ruge³,Yang Jinbo¹⁴⁵,Lu Jing¹²⁴⁵^ORCID

Affiliation:

1. State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China

2. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics Peking University Beijing 100871 P. R. China

3. State Key Laboratory of Information Photonics and Optical Communications and School of Science Beijing University of Posts and Telecommunications Beijing 100876 P. R. China

4. Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China

5. Beijing Key Laboratory for Magnetoelectric Materials and Devices Beijing 100871 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Multidisciplinary,Modeling and Simulation,Numerical Analysis,Statistics and Probability

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adts.202000252

Reference63 articles.

1. Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2by Dielectric and Carrier Screening

2. Simultaneous synthesis and integration of two-dimensional electronic components

3. Two-Dimensional Tellurium: Progress, Challenges, and Prospects

4. Interaction of Black Phosphorus with Oxygen and Water

5. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

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