Spline‐Based Drift Analysis for the Reliability of Semiconductor Devices-Reference-Cited by-同舟云学术

Spline‐Based Drift Analysis for the Reliability of Semiconductor Devices

Published:2021-07-10 Issue:8 Volume:4 Page:2100092
ISSN:2513-0390
Container-title:Advanced Theory and Simulations
language:en
Short-container-title:Adv. Theory Simul.

Author:

Hofer Vera¹,Nowak Thomas¹^ORCID,Lewitschnig Horst²

Affiliation:

1. Department of Operations and Information System University of Graz Universitätsstraße 15/E3 Graz 8010 Austria

2. Infineon Technologies Austria AG Siemensstraße 2 Villach 9500 Austria

Funder

Electronic Components and Systems for European Leadership

Publisher

Wiley

Subject

Multidisciplinary,Modeling and Simulation,Numerical Analysis,Statistics and Probability

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adts.202100092

Reference19 articles.

1. Automotive Electronics Council.Failure Mechanism Based Stress Test Qualification for Integrated Circuits http://www.aecouncil.com/Documents/AEC_Q100_Rev_H_Base_Document.pdf(accessed: May 302021).

2. Automotive Electronics Council.Failure Mechanism Based Stress Test Qualification for Discrete Semiconductors in Automotive Applications http://www.aecouncil.com/Documents/AEC_Q101_Rev_D1_Base_Document.pdf(accessed: May 302021).

3. JEDEC Standard JESD22‐A108F.Temperature Bias and Operating Life JEDEC Solid State Technology Association Arlington County VA2017.

4. JEDEC Publication JEP122H.Failure Mechanisms and Models for Semiconductor Devices vol.80 JEDEC Solid State Technology Association Arlington County VA2016.

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