Thin Al2O3passivated boron emitter of n-type bifacial c-Si solar cells with industrial process-Reference-Cited by-同舟云学术

Thin Al2O3passivated boron emitter of n-type bifacial c-Si solar cells with industrial process

Published:2017-01-16 Issue:4 Volume:25 Page:280-290
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Lu Guilin¹,Zheng Fei²,Wang Jianqiang²,Shen Wenzhong¹³

Affiliation:

1. Institute of Solar Energy, and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy; Shanghai Jiao Tong University; Shanghai 200240 China

2. Shanghai Shenzhou New Energy Development Co., Ltd.; Shanghai 201112 China

3. Collaborative Innovation Center of Advanced Microstructures; Nanjing 210093 China

Funder

National Natural Science Foundation of China

Shanghai Municipal Project

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Recombination activity of interstitial iron and other transition metal point defects in p-and n-type crystalline silicon;Macdonald;Applied Physics Letters,2004

2. Minority carrier lifetime degradation in boron-doped Czochralski silicon;Glunz;Journal of Applied Physics,2001

3. Design optimization of bifacial solar cell by PC1D simulation;Sepeai;Journal of Energy Technologies and Policy,2013

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