Influence of boron doping profile on emitter and metal contact recombination for n-PERT silicon solar cells-Reference-Cited by-同舟云学术

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Influence of boron doping profile on emitter and metal contact recombination for n-PERT silicon solar cells

Published:2024-08 Issue: Volume:272 Page:112886
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Bektaş Gence^ORCID,Aslan Sercan^ORCID,Keçeci Ahmet Emin^ORCID,Özyahni Vahdet^ORCID,Canar Hasan Hüseyin^ORCID,Asav Hasan^ORCID,Seyrek Selin,Verlinden Pierre J.,Turan Raşit

Funder

TÜBİTAK

Publisher

Elsevier BV

Reference44 articles.

1. Review of light-induced degradation in crystalline silicon solar cells;Lindroos;Sol. Energy Mater. Sol. Cells,2016

2. Optimization of boron diffusion for screen printed n-PERT solar cells;Mojrová;Energy Proc.,2016

3. A comparative study on alternative industrial manufacturing routes for bifacial n-PERT silicon solar cells;Bektaş;Prog. Photovoltaics Res. Appl.,2023

4. Comparison of electrical performances of fully ion implanted n-PERT solar cells made of different n-type wafer feedstocks;Bektaş,2021

5. Ion Implanted Homojunction Crystalline Silicon Solar Cells;Bektaş,2022

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