Electron Microscopy of Dislocations and Other Defects in Sapphire and in Silicon Carbide, Thinned by Sputtering-Reference-Cited by-同舟云学术

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Electron Microscopy of Dislocations and Other Defects in Sapphire and in Silicon Carbide, Thinned by Sputtering

Published:1965 Issue:2 Volume:9 Page:635-642
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Drum C. M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. A kinematical theory of diffraction contrast of electron transmission microscope images of dislocations and other defects

2. Fundamentals of Transmission Electron Microscopy, Interscience, New York 1964.

3. The Direct Observation of Dislocations, Academic Press, New York 1964.

4. Jet Thinning Device for Preparation of Al2O3 Electron Microscope Specimens

5. and , A.E.R. E. Report 4699 (1964), available from Reports Section, Atomic Energy Research Establishment, Harwell, Berks.

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4. Effect of indenter shape and surface crystallographic orientation on frictional plastic flow and fracture in α-SiC;Wear;1987-11

5. Implantation of gases into sapphire;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1987-01

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