Cathodoluminescence Yields in Highly Excited CdS-Reference-Cited by-同舟云学术

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Cathodoluminescence Yields in Highly Excited CdS

Published:1967 Issue:2 Volume:23 Page:703-708
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Egorov V. D.,Müller G. O.,Weber H. H.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Zur Photoleitung aktivierter Kadmiumsulfid-Schichten bei Anregung mit Elektronen

2. thesis, humboldt-universität berlin (1965).

4. Proc. Internat. Conf. On semicond. Phys., Prague (1960).

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Control of Carrier Concentration by Stimulated Emission in Highly Excited Direct Gap Semiconductors;physica status solidi (b);1984-03-01

2. Effect of High Excitation on Carrier Density in Direct Gap Semiconductors;physica status solidi (b);1980-11-01

3. Some evidence upon “biexciton” emission lines in CdS;Solid State Communications;1975-06

4. Excitons in CdS at high excitation levels;Physica Status Solidi (b);1973-11-01

5. Photocurrent saturation in CdS single crystals under electron beam excitation;Physica Status Solidi (b);1971-09-01

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