Effect of High Excitation on Carrier Density in Direct Gap Semiconductors-Reference-Cited by-同舟云学术

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Effect of High Excitation on Carrier Density in Direct Gap Semiconductors

Published:1980-11-01 Issue:1 Volume:102 Page:317-321
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Egorov V. D.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Mn55Nuclear Magnetic Resonance in MnF2—The Suhl-Nakamura Interaction

2. and , Proc. XIV. Internat. Conf. Phys. Semicond., Edinburgh 1978 (p. 165).

3. Time-resolved spectra of spontaneous luminescence from high density electron-hole plasma in CdS

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of nonradiative traps by hot electron–hole plasma luminescence dynamics in polar semiconductors;Applied Physics Letters;1998-01-12

2. Sample-Dependent Luminescence Spectra in Highly Photoexcited CdS and CdSe;physica status solidi (b);1984-12-01

3. Control of Carrier Concentration by Stimulated Emission in Highly Excited Direct Gap Semiconductors;physica status solidi (b);1984-03-01

4. Spatial and spectral characteristics and a new model of laser generation for CdS-type single crystals under one-photon excitation;Physica Status Solidi (a);1983-07-16

5. One-and two-photon excited picosecond conductivity in CdS;Optics Communications;1983-04

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