Unlocking the Potential of Tin‐Based Perovskites: Properties, Progress, and Applications in New‐Era Electronics

Abstract

AbstractElectronics have greatly promoted the development of modern society and the exploration of new semiconducting materials with low cost and high mobility continues to attract interest in the advance of next‐generation electronic devices. Among emerging semiconductors, the metal‐halide perovskite, especially the nontoxic tin (Sn)‐based candidates, has recently made breakthroughs in the field of diverse electronic devices due to its excellent charge transport properties and cost‐effective large‐area deposition capability at low temperatures. To enable a more comprehensive understanding of this emerging research field and promote the development of new‐generation perovskite electronics, this review aims to provide an in‐depth understanding with the discussion of unique physical properties of Sn‐based perovskites and the summarization of recent research progress of Sn‐based perovskite field‐effect transistors (FETs) and diverse electronic devices. The unique character of negligible ion migration is also discussed, which is fundamentally different from the lead‐based counterparts and provides a great prerequisite for device application. The following section highlights the potential broad applications of Sn‐perovskite FETs as a competitive and feasible technology. Finally, an outlook and remaining challenges are given to advance the progression of Sn‐based perovskite FETs, especially on the origin and solution of stability problems toward high‐performance Sn‐based perovskite electronics.