Spalling‐Induced Liftoff and Transfer of Electronic Films Using a van der Waals Release Layer-Reference-Cited by-同舟云学术

Spalling‐Induced Liftoff and Transfer of Electronic Films Using a van der Waals Release Layer

Published:2021-09-20 Issue:42 Volume:17 Page:2102668
ISSN:1613-6810
Container-title:Small
language:en
Short-container-title:Small

Author:

Blanton Eric W.¹^ORCID,Motala Michael J.²,Prusnick Timothy A.¹,Hilton Albert¹,Brown Jeff L.¹,Bhattacharyya Arkka³,Krishnamoorthy Sriram³⁴,Leedy Kevin⁵,Glavin Nicholas R.⁶,Snure Michael⁵

Affiliation:

1. KBR Beavercreek OH 45431 USA

2. UES Dayton OH 45432 USA

3. Electrical and Computer Engineering University of Utah Salt Lake City UT 84112 USA

4. Materials Department University of California, Santa Barbara Santa Barbara CA 93106 USA

5. Air Force Research Laboratory Sensors Directorate WPAFB OH 45433 USA

6. Air Force Research Laboratory Materials and Manufacturing Directorate WPAFB 45433 USA

Funder

Air Force Office of Scientific Research

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202102668

Reference46 articles.

1. IEEE Heterogeneous Integration Roadmap 2019 http://eps.ieee.org/hir(accessed: March2021).

2. High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

3. Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding

4. Ultra-thin chips for high-performance flexible electronics

5. Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Damage-free dry transfer method using stress engineering for high-performance flexible two- and three-dimensional electronics;Nature Materials;2024-06-21

2. Two-dimensional materials for future information technology: status and prospects;Science China Information Sciences;2024-05-29

3. Spalling induced van der Waals lift-off and transfer of 4-in. GaN epitaxial films;Journal of Applied Physics;2023-07-14

4. Effect of surface potential pinning on strain behavior of AlGaN/GaN device structures;Applied Physics Letters;2023-04-24

5. Recent Advances in Mechanically Transferable III‐Nitride Based on 2D Buffer Strategy;Advanced Functional Materials;2023-01-15