Achieving High Fill Factor in Efficient P‐i‐N Perovskite Solar Cells

Abstract

AbstractLead halide perovskite solar cells (PSCs) have made unprecedented progress, exhibiting great potential for commercialization. Among them, inverted p‐i‐n PSCs provide outstanding compatibility with flexible substrates, more importantly, with silicon (Si) bottom devices for higher efficiency perovskite‐Si tandem solar cells. However, even with recently obtained efficiency over 25%, the investigation of inverted p‐i‐n PSCs is still behind the n‐i‐p counterpart so far. Recent progress has demonstrated that the fill factor (FF) in inverted PSCs currently still underperforms relative to open‐circuit voltage and short‐circuit current density, which requires an in‐depth understanding of the mechanism and further research. In this review article, the recent advancements in high FF inverted PSCs by adopting the approaches of interfacial optimization, precursor engineering as well as fabrication techniques to minimize undesirable recombination are summarized. Insufficient carrier extraction and transport efficiency are found to be the main factors that hinder the current FF of inverted PSCs. In addition, insights into the main factors limiting FF and strategies for minimizing series resistance in inverted PSCs are presented. The continuous efforts dedicated to the FF of high‐performance inverted devices may pave the way toward commercial applications of PSCs in the near future.