Carbon Nanotube Diodes Operating at Frequencies of Over 50 GHz

Author:

Xue Chenqiao1,Wu Weifeng1,Yang Yingjun1,Zhou Jianshuo1,Ding Li1,Wang Sheng12ORCID

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon‐Based Electronics School of Electronics Peking University Beijing 100871 P. R. China

2. State Key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Peking University Beijing 100871 P. R. China

Abstract

AbstractRadiofrequency (RF) diodes used for fifth and sixth‐generation (5G and 6G) mobile and wireless communication networks generally require ultrahigh cut‐off frequencies and high integration densities of devices with different functions on a single chip and at low cost. Carbon nanotube diodes are promising devices for radiofrequency applications, but the cut‐off frequencies are still far below the theoretical estimates. Here, a carbon nanotube diode that operates in the millimeter‐wave frequency bands and is based on solution‐processed, high‐purity carbon nanotube network films is reported. The carbon nanotube diodes exhibit an intrinsic cut‐off frequency over 100 GHz and the as‐measured bandwidth can exceed 50 GHz at least. Furthermore, The rectification ratio of the carbon nanotube diode by approximately three times by using yttrium oxide for local p‐type doping in the diode channel is improved.

Funder

National Natural Science Foundation of China

Ji Hua Laboratory

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

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