Unconventional Magnetic and Magneto‐Transport Properties in Quasi‐2D Ni0.28TaSeS Single Crystal

Author:

Huang Lizhen1ORCID,Wang Changlong1,Liu Ping2,Wang Shasha1,Tan Haige1,Liu Zhanfeng3,Feng Yan1,Ma Xiang1,Wu Junjie1,Sun Zhe3,Cui Shengtao3,Lu Yalin1,Xiang Bin1

Affiliation:

1. Department of Materials Science & Engineering CAS Key Lab of Materials for Energy Conversion Anhui Laboratory of Advanced Photon Science and Technology University of Science and Technology of China Hefei 230026 P. R. China

2. School of Science Nanjing University of Posts and Telecommunications Nanjing 210023 P. R. China

3. National Synchrotron Radiation Laboratory CAS Center for Excellence in Nanoscience University of Science and Technology of China Hefei Anhui 230029 P. R. China

Abstract

AbstractVan der Waals (vdW) magnetic materials have broad application prospects in next‐generation spintronics. Inserting magnetic elements into nonmagnetic vdW materials can introduce magnetism and enhance various transport properties. Herein, the unconventional magnetic and magneto‐transport phenomena is reported in Ni0.28TaSeS crystal by intercalating Ni atoms into nonmagnetic 2H‐TaSeS matrix. Magnetic characterization reveals a canted magnetic structure in Ni0.28TaSeS, which results in an antiferromagnetic (AFM) order along the c‐axis and a ferromagnetic (FM) moment in the ab‐plane. The presence of spin‐flop (SF) behavior can also be attributed to the canted magnetic structure. Temperature‐dependent resistivity exhibits a metallic behavior with an abrupt decrease corresponding to the magnetic transition. Magneto‐transport measurements demonstrate a positive magnetoresistance (MR) with a plateau that is different from conventional magnetic materials. The field‐dependent Hall signal exhibits nonlinear field dependence when the material is in magnetically ordered state. These unconventional magneto‐transport behaviors are attributed to the field‐induced formation of a complex spin texture in Ni0.28TaSeS. In addition, it further investigated the angle dependence of MR and observed an unusual fourfold anisotropic magnetoresistance (AMR) effect. This work inspires future research on spintronic devices utilizing magnetic atom‐intercalated quasi‐2D materials.

Funder

National Natural Science Foundation of China

National Synchrotron Radiation Laboratory

Publisher

Wiley

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