Layer‐Dependent Raman Spectroscopy and Electronic Applications of Wide‐Bandgap 2D Semiconductor β‐ZrNCl-Reference-Cited by-同舟云学术

Layer‐Dependent Raman Spectroscopy and Electronic Applications of Wide‐Bandgap 2D Semiconductor β‐ZrNCl

Published:2022-02-20 Issue:14 Volume:18 Page:2107490
ISSN:1613-6810
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language:en
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Author:

Nong Huiyu¹,Wu Qinke¹,Tan Junyang¹,Sun Yujie¹,Zheng Rongxu¹,Zhang Rongjie¹,Zhao Shilong¹,Liu Bilu¹^ORCID

Affiliation:

1. Shenzhen Geim Graphene Center Tsinghua−Berkeley Shenzhen Institute and Institute of Materials Research Shenzhen International Graduate School Tsinghua University Shenzhen 518055 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202107490

Reference46 articles.

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3. The two-dimensional phase of boron nitride: Few-atomic-layer sheets and suspended membranes

4. Black phosphorus field-effect transistors

5. High yield growth and doping of black phosphorus with tunable electronic properties

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