Examining Different Regimes of Ionization‐Induced Damage in GaN Through Atomistic Simulations-Reference-Cited by-同舟云学术

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Examining Different Regimes of Ionization‐Induced Damage in GaN Through Atomistic Simulations

Published:2022-10-30 Issue:49 Volume:18 Page:2102235
ISSN:1613-6810
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language:en
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Author:

Sequeira Miguel C.¹²^ORCID,Djurabekova Flyura³,Nordlund Kai³,Mattei Jean‐Gabriel⁴,Monnet Isabelle⁴,Grygiel Clara⁴,Alves Eduardo²,Lorenz Katharina²⁵

Affiliation:

1. IBC Helmholtz‐Zentrum Dresden‐Rossendorf Dresden Germany

2. IPFN Instituto Superior Técnico Campus Tecnológico e Nuclear Lisbon Portugal

3. Department of Physics University of Helsinki Helsinki Finland

4. CIMAP Normandie University CEA, CNRS, UNICAEN, ENSICAEN‐BP5133 Caen Cedex 5 France

5. INESC MN Rua Alves Redol 9 Lisbon 1000‐029 Portugal

Funder

Fundação para a Ciência e a Tecnologia

Horizon 2020 Framework Programme

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202102235

Reference57 articles.

1. The Blue Laser Diode

2. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

3. Review—Ionizing Radiation Damage Effects on GaN Devices

4. GaN-Based RF Power Devices and Amplifiers

5. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

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1. Impact of radiation damage on the photoconductor and photodiode properties of GaN core–shell p–n junction microwires;Radiation Physics and Chemistry;2024-11

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3. Nanostructures formation on metal surfaces by an impact of slow highly charged ions: Theoretical model;Vacuum;2024-06

4. Microstructural changes in GaN and AlN under 950 MeV Au swift heavy ion irradiation;Applied Physics Letters;2024-03-11

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