Affiliation:
1. School of Integrated Circuits Huazhong University of Science and Technology Wuhan Hubei 430074 China
2. School of Physic and Optoelectronic Engineering Yangtze University Jingzhou Hubei 434023 China
3. State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China
4. Department of Electronic Engineering Materials Science and Technology Research Center The Chinese University of Hong Kong Hong Kong 999077 China
5. Hubei Yangtze Memory Laboratories Wuhan 430205 China
Abstract
AbstractThis review explores the growing interest in 2D layered materials, such as graphene, h‐BN, transition metal dichalcogenides (TMDs), and black phosphorus (BP), with a specific focus on recent advances in strain engineering. Both experimental and theoretical results are delved into, highlighting the potential of strain to modulate physical properties, thereby enhancing device performance. Various strain engineering methods are summarized, and the impact of strain on the electrical, optical, magnetic, thermal, and valleytronic properties of 2D materials is thoroughly examined. Finally, the review concludes by addressing potential applications and challenges in utilizing strain engineering for functional devices, offering valuable insights for further research and applications in optoelectronics, thermionics, and spintronics.
Funder
National Natural Science Foundation of China
Innovative Research Group Project of the National Natural Science Foundation of China
Key Technologies Research and Development Program
Cited by
1 articles.
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