Affiliation:
1. State Key Laboratory of Photon‐Technology in Western China Energy International Collaborative Center on Photoelectric Technology and Nano Functional Materials Institute of Photonics & Photon Technology School of Physics Northwest University Xi'an 710069 P. R. China
2. Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
3. Shaanxi Joint Key Laboratory of Graphene School of Advanced Materials and Nanotechnology Xidian University Xi'an 710126 P. R. China
4. State Key Laboratory of Electrical Insulation and Power Equipment Center of Nanomaterials for Renewable Energy School of Electrical Engineering Xi'an Jiaotong University Xi'an 710049 P. R. China
Abstract
AbstractViolet phosphorus (VP), a newly emerging elemental 2D semiconductor, with attractive properties such as tunable bandgap, high carrier mobility, and unusual structural anisotropy, offers significant opportunities for designing high‐performance electronic and optoelectronic devices. However, the study on fundamental property and device application of 2D VP is seriously hindered by its inherent instability in ambient air. Here, a VP/MoS2 van der Waals heterostructure is constructed by vertically staking few‐layer VP and MoS2, aiming to utilize the synergistic effect of the two materials to achieve a high‐performance 2D photodetector. The strong optical absorption of VP combining with the type‐II band alignment of VP/MoS2 heterostructure make VP play a prominent photogating effect. As a result, the VP/MoS2 heterostructure photodetector achieves an excellent photoresponse performances with ultrahigh responsivity of 3.82 × 105 A W–1, high specific detectivity of 9.17 × 1013 Jones, large external quantum efficiency of 8.91 × 107 %, and gate tunability, which are much superior to that of individual MoS2 device or VP device. Moreover, the VP/MoS2 heterostructure photodetector indicates superior air stability due to the effective protection of VP by MoS2 encapsulation. This work sheds light on the future study of the fundamental property and optoelectronic device application of VP.
Funder
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
Subject
Biomaterials,Biotechnology,General Materials Science,General Chemistry
Cited by
3 articles.
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