Dielectric Design of High Dielectric Constant Poly(Urea‐Urethane) Elastomer for Low‐Voltage High‐Mobility Intrinsically Stretchable All‐Solution‐Processed Organic Transistors

Author:

Zhang Mingxin1,Sun Jing1,Zhao Guodong1,Tong Yanhong1,Wang Xue1,Yu Hongyan1,Xue Peng1,Zhao Xiaoli1,Tang Qingxin1ORCID,Liu Yichun1

Affiliation:

1. Centre for Advanced Optoelectronic Functional Materials Research, Key Laboratory of UV‐Emitting Materials and Technology Ministry of Education Northeast Normal University Changchun 130024 P. R. China

Abstract

AbstractStretchable organic transistors for skin‐like biomedical applications require low‐voltage operation to accommodate limited power supply and safe concerns. However, most of the currently reported stretchable organic transistors operate at relatively high voltages. Decreasing their operational voltage while keeping the high mobility still remains a key challenge. Here, the study presents a new dielectric design to achieve high‐dielectric constant poly(urea‐urethane) (PUU) elastomer, by incorporating a flexible small‐molecular diamine crosslinking agent 4‐aminophenyl disulfide (APDS) into the main chain of (poly (propylene glycol), tolylene 2,4‐diiso‐cyanate terminated) (PPG‐TDI). Compared with commercial elastomers, the PUU elastomer as dielectric of the stretchable organic transistors shows the outstanding advantages including lower surface roughness (0.33 nm), higher adhesion (45.18 nN), higher dielectric constant (13.5), as well as higher stretchability (896%). The PUU dielectric enables the intrinsically stretchable, all‐solution‐processed organic transistor to operate at a low operational voltage down to −10 V, while preserving a substantial mobility of 1.39 cm2 V−1 s−1. Impressively, the transistor also demonstrates excellent electrical stability under repeated switching of 10 000 cycles, and remarkable mechanical robustness when stretched up to 100%. The work opens up a new molecular engineering strategy to successfully realize low‐voltage high‐mobility stretchable all‐solution‐processed organic transistors.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

Natural Science Foundation of Jilin Province

Publisher

Wiley

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