A nonuniform distributed power amplifier in 0.18-mm CMOS technology-Reference-Cited by-同舟云学术

A nonuniform distributed power amplifier in 0.18-mm CMOS technology

Published:2017-03-30 Issue:6 Volume:59 Page:1416-1420
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Zhang Ying¹²^ORCID,Ma Kaixue²,Zhang Changchun¹,Zhang Yi¹,Guo Yufeng¹

Affiliation:

1. National Joint Engineering Laboratory of Radio Frequency Integration and Micro Assembly Technology; Nanjing University of Posts and Telecommunications; Nanjing Republic of China

2. School of Physical Electronics; University of Electronic Science and Technology of China; Chengdu Republic of China

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Natural Science Foundation of the Jiangsu Higher Education Institutions of China

Research Fund of Nanjing University of Posts and Telecommunications

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Design and Analysis of a Stage-Scaled Distributed Power Amplifier;Chen;IEEE Trans Microwave Theory Tech,2011

2. Unilateralization of MMIC Distributed Amplifiers;Gholamreza;IEEE Trans. Microwave Theory Tech,2014

3. A Concurrent Ku/K/Ka Tri-Band Distributed Power Amplifier With Negative-Resistance Active Notch Using SiGe BiCMOS Process;Kyoungwoon;IEEE Trans. Microwave Theory Tech,2014

4. 170 GHz SiGe-BiCMOS Loss-Compensated Distributed Amplifier;Testa;IEEE J. Solid-State Circuits,2015

5. A Novel Distributed Amplifier With High Gain, Low Noise, and High Output Power in CMOS Technology;Kao;IEEE Trans Microwave Theory Tech,2013

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