Controlling Memristance and Negative Differential Resistance in Point‐Contacted Metal–Oxides–Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping-Reference-Cited by-同舟云学术

Controlling Memristance and Negative Differential Resistance in Point‐Contacted Metal–Oxides–Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping

Published:2022-04-08 Issue:6 Volume:4 Page:2200020
ISSN:2640-4567
Container-title:Advanced Intelligent Systems
language:en
Short-container-title:Advanced Intelligent Systems

Author:

Gan Xin¹²,Zhang Yueying¹²,Hui Yupeng¹²,Liu Shaoxuan¹²,Wang Lei¹²,Zhang Jincheng¹²³,Hao Yue¹²³,Ma Haijiao Harsan¹²³^ORCID

Affiliation:

1. Low Dimensional Quantum Physics & Device Group School of Microelectronics Xidian University 2 South Taibai Road Xi'an 710071 China

2. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University 2 South Taibai Road Xi'an 710071 China

3. Collaborative Innovation Center of Quantum Information of Shaanxi Province Xidian University Xi'an 710071 China

Funder

National Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aisy.202200020

Reference51 articles.

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