Coexistence mechanisms of negative differential resistance and resistive switching effects in a WOx-based memristor
Author:
Affiliation:
1. School of Microelectronics, Northwestern Polytechnical University, Xi’an, 710072, China
2. College of Information and Computer Engineering, Northeast Forestry University, Harbin, 150040, China
Abstract
Funder
Key Research and Development Projects of Shaanxi Province
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry,Catalysis
Link
http://pubs.rsc.org/en/content/articlepdf/2023/NJ/D3NJ02337K
Reference43 articles.
1. Bilayered Oxide‐Based Cognitive Memristor with Brain‐Inspired Learning Activities
2. Competing memristors for brain-inspired computing
3. Memristors Enabled Computing Correlation Parameter In-Memory System: A Potential Alternative to Von Neumann Architecture
4. Photonic Memristor for Future Computing: A Perspective
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