Affiliation:
1. Department of Science Mathematics and Technology Singapore University of Technology and Design Singapore 487372 Singapore
2. College of Information Science and Electronic Engineering Zhejiang University Hangzhou 310027 China
3. Department of Engineering University of Cambridge Trumpington Street Cambridge CB2 1PZ UK
4. School of Materials Science and Engineering Kyungpook National University Daegu 41566 Republic of Korea
Abstract
Modern innovations are built on the foundation of computers. Compared to von Neumann architectures having separate storage and processing units, in‐memory operation utilizes the same primary structure for data storage and register operations, therefore promising to decrease the energy cost of computing in data centers significantly. While various studies centered on exploring novel device architectures, designing suitable material platforms is extremely challenging. Herein, all four material (M) states of a phase‐change material (PCM) in data storage and register operations are utilized and a combined M state‐based model framework for developing in‐memory operation is demonstrated, along with nonvolatile, reprogrammable single‐cell shift register operations. A previously unachieved multiple‐level‐per‐volt different‐initial‐state multilevel set process with further computing in the M state‐based platform is realized. The simplest case of a programmable shift register configuration is demonstrated with a serial‐in–serial‐out processing strategy, as well as more complex reprogrammable processing schemes using the M state‐type platform, showing previously unreported nonvolatile shift register types with multiple processing approaches. This paves the way for development of next‐generation low‐power‐electronic systems using two‐terminal‐based semiconductor materials.
Funder
Ministry of Education - Singapore
Cited by
3 articles.
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